Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： This letter indicates that the ultra-thin-body (UTB) germanium-on-insulator (GeOI) MOSFETs preserve the leakage reduction property of stacking devices, while the band-to-band-tunneling leakage of bulk Ge-channel devices cannot be reduced by stacking transistors. The seemingly contradictory behavior of the stack-effect factors is explained by the difference in the flows of band-to-band-tunneling hole fluxes for UTB GeOI and bulk Ge-channel devices and validated by TCAD mixed-mode simulations. At 300 K, the stack-effect factors of UTB GeOI MOSFETs range from 6.8 to 40 (N = 2) and from 12 to 142 (N = 3) at Vdd = 0.5-1 V. As the temperature increases or Vdd decreases, the stack-effect factor for UTB GeOI devices decreases, while the stack-effect factor for bulk Ge-channel MOSFETs increases, because the subthreshold leakage current becomes more significant at higher temperature or lower voltage with respect to the band-to-band-tunneling leakage current. 其他題名： LED 出版者： New York, NY: IEEE 出版日期： 2012-02-01 出處： IEEE electron device letters, 2012-02, Vol.33 (2), p.197-199 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Feb 2012 識別號： ISSN: 0741-3106 識別號： EISSN: 1558-0563 識別號： DOI: 10.1109/LED.2011.2177955 識別號： CODEN: EDLEDZ
