Brightly photoluminescent phosphor materials based on silicon quantum dots with oxide shell passivation

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/106683

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106683

Title:	Brightly photoluminescent phosphor materials based on silicon quantum dots with oxide shell passivation
Authors:	杜長慶;Tu, Chang-Ching;Zhang, Qifeng;Lin, Lih Y.;Cao, Guozhong
Contributors:	資訊電機學院電機工程學系
Keywords:	Lighting - methods;Luminescent Measurements - methods;Oxides - chemistry;Quantum Dots;Silicon Dioxide - chemistry
Date:	2012-01-02
Issue Date:	2026-04-23 13:36:18 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： We demonstrate silicon-based phosphor materials which exhibit bright photoluminescence from near-infra-red to green. The colloidal composites which are composed of silicon quantum dots (SiQDs) attached on micro-size silicon particles are synthesized by electrochemical etching of silicon wafers and then dispersed in ethanol. Subsequently, isotropic etching by HF/HNO3 mixture controls the size so as the emission wavelength of SiQDs, and forms an oxide passivating shell. The phosphors can further react with alkoxysilanes to form a stable suspension in non-polar solvents for solution-processing. The resulting red-light-emitting SiQD-based phosphors in chloroform exhibit photoluminescence external quantum efficiency of 15.9%. Their thin films can be efficiently excited by InGaN light-emitting diodes and are stable in room condition. 其他題名： Opt Express 出版者： United States 出版日期： 2012-01-02 出處： Optics express, 2012-01, Vol.20 (S1), p.A69 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.20.000A69 識別號： PMID: 22379666
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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