Broadband and high-efficiency power amplifier that integrates CMOS and IPD technology

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/106691

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106691

Title:	Broadband and high-efficiency power amplifier that integrates CMOS and IPD technology
Authors:	邱煥凱;Chiou, Hwann-Kaeo;Chung, Hua-Yen;Hsu, Yuan-Chia;Chang, Da-Chiang;Juang, Ying-Zong
Contributors:	資訊電機學院電機工程學系
Keywords:	Bandwidth;Broadband;Broadband class-E power amplifier;Broadband communication;CMOS;CMOS integrated circuits;Devices;Electronics industry;flip-chip;Impedance;Impedance matching;Inductors;Integrated circuits;integrated passive device (IPD);Networks;Packaging;Passive components;Power amplifiers;Ruthroff-type transmission line transformer (TLT);Switching;system-in-package (SiP);Windings
Date:	2013-08-08
Issue Date:	2026-04-23 13:36:30 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;Piscataway: IEEE
Abstract:	摘要： This paper presents a broadband and high-efficiency integrated CMOS-integrated passive device (IPD) power amplifier (PA) with heterogeneous integration of active devices that are fabricated using 0.18 μm CMOS technology and passive components that are fabricated using IPD technology. The passive components that are fabricated using IPD technology have the advantages of high-Q, low-loss performance, and low cost. By replacing the conventional series resonant output matching network of class-E PA with a broadband Ruthroff-type transmission line transformer (TLT), the proposed PA exhibits broadband characteristics. It performs efficiently owing to the benefits of the low-loss TLT and the switching mode operation of the class-E PA. The measurements demonstrate an output power of more than 25.64 dBm and a power-added efficiency (PAE) of more than 40.2% over the bandwidth from 2 to 3 GHz. The peak output power and PAE are 26.18 dBm and 47.4%, respectively. 其他題名： TCPMT 出版者： Piscataway: IEEE 出版日期： 2013-09-01 出處： IEEE transactions on components, packaging, and manufacturing technology (2011), 2013-09, Vol.3 (9), p.1489-1497 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2013 識別號： ISSN: 2156-3950 識別號： EISSN: 2156-3985 識別號： DOI: 10.1109/TCPMT.2013.2266119 識別號： CODEN: ITCPC8
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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