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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106711


    Title: Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM
    Authors: 許鈞瓏;Luo, Kun-Lun;Wu, Ming-Hsueh;Hsu, Chun-Lung;Chen, Chen-An
    Contributors: 資訊電機學院電機工程學系
    Keywords: CAE) and Design;Channels;Circuits and Systems;Computer & video games;Computer-Aided Engineering (CAD;Consoles;Dynamic random access memory;Electrical Engineering;Engineering;Feasibility;Mobile communication systems;Portable computers;Smartphones;Stacking;Tablet computers;Test systems;Test times
    Date: 2016-04-01
    Issue Date: 2026-04-23 13:38:09 (UTC+8)
    Publisher: Springer Netherlands;New York: Springer US
    Abstract: 摘要: Mobile Wide-I/O DRAMs are used in smartphones, tablets, handheld gaming consoles and other mobile devices. The main benefit of the Wide-I/O DRAM over its predecessors (such as LPDDRx DRAMs) is that it offers more bandwidth at lower power. In this paper, we propose a Wide-I/O DRAM built-in self-test design, named WIO-BIST including the local BIST (LO-BIST), global BIST (GL-BIST) and test interface structures, to support the fault detection in memory-die channels and TSVs. It should be noted that, a TSV test scheme is presented embedding the test procedure of TSVs into the memory-die channel test processes to significantly save the test time of TSVs. A logic die and 4 memory-dies stacking configuration is used to act as a dedicated circuit to demonstrate the feasibility of the proposed WIO-BIST design. Experimental results and comparisons show that the proposed WIO-BIST design has good performance in test time reduction with tiny extra area overhead penalty.
    其他題名: J Electron Test
    出版者: New York: Springer US
    出版日期: 2016-04-01
    出處: Journal of electronic testing, 2016-04, Vol.32 (2), p.111-123
    版權: Springer Science+Business Media New York 2016
    識別號: ISSN: 0923-8174
    識別號: EISSN: 1573-0727
    識別號: DOI: 10.1007/s10836-016-5570-8
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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