摘要： A GaAsSb step-graded metamorphic buffer layer is used for growing InAs/AlSb high electron mobility transistor structures on Si substrate by molecular beam epitaxy. The step-graded metamorphic buffer layer effectively reduces the number of microtwins and stacking faults penetrating to the InAs channel as evidenced by transmission electron microscopy. By reducing the planar defects with the metamorphic buffer layer, a significant improvement on electron mobility up to 18 100 cm2/V s and 39 700 cm2/V s at room temperature and 77 K, respectively, is achieved. 出版日期： 2013-11 出處： Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6), p.61207 資源來源： AIP Journals (American Institute of Physics) 版權： American Vacuum Society 識別號： ISSN: 2166-2746 識別號： EISSN: 1520-8567 識別號： EISSN: 2166-2754 識別號： DOI: 10.1116/1.4827266 識別號： CODEN: JVTBD9
