Compact high-linearity, high-efficiency complementary metal-oxide-semiconductor power amplifier with post-distortion lineariser for wireless local area network and Wireless Gigabit Alliance applications

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Title:	Compact high-linearity, high-efficiency complementary metal-oxide-semiconductor power amplifier with post-distortion lineariser for wireless local area network and Wireless Gigabit Alliance applications
Authors:	邱煥凱;Lin, Kuei-Cheng;Chiou, Hwann-Kaeo;Ko, Chun-Lin;Wu, Po-Chang;Tsai, Hann-Huei;Juang, Ying-Zong
Contributors:	資訊電機學院電機工程學系
Keywords:	Amplification;CMOS;CMOS integrated circuits;compact high‐efficiency CMOS power amplifier fabrication;compact high‐linearity complementary metal‐oxide‐semiconductor PA;Compressing;frequency 5 GHz to 60 GHz;Gain;gain 1 dB to 16.3 dB;microwave integrated circuits;microwave power amplifiers;millimetre wave integrated circuits;millimetre wave power amplifiers;Noise levels;output gain compression point;PAS;post‐distortion linearisation technique;post‐distortion lineariser;Power amplifiers;power‐added efficiency;Review Article;size 0.18 mum to 90 nm;Wireless communication;wireless gigabit alliance applications;wireless LAN;wireless local area network
Date:	2016-03-19
Issue Date:	2026-04-23 13:41:43 (UTC+8)
Publisher:	Institution of Engineering and Technology;The Institution of Engineering and Technology
Abstract:	摘要： This study proposes a post-distortion linearisation technique for 5 and 60 GHz complementary metal–oxide–semiconductor (CMOS) power amplifiers (PAs). The technique improves the output 1 dB gain compression point (OP1dB) and power-added efficiency (PAE) of the PA when the lineariser is turned on. The 5 GHz PA that is fabricated in tsmcTM 0.18 μm CMOS achieves a 16.3 dB gain, a 20 dBm OP1dB and a 32.6% PAE. The linearised 5 GHz PA improves the OP1dB and PAE by 2.3 dB and 3.2% as compared to the PA without lineariser. The difference between the OP1dB and saturated power (Psat) is <0.2 dB. The 60 GHz PA was implemented in a 90 nm CMOS process with a chip area of 0.57 mm2. The PA achieves a 14.8 dB gain, a 16.8 dBm OP1dB with a 16.3% PAE and a 15 GHz 3 dB bandwidth. The power difference between the OP1dB and Psat is <0.3 dB. The linearised 60 GHz PA improves the OP1dB and PAE by 3.2 dB and 5.8% as compared to the PA without lineariser. 出版者： The Institution of Engineering and Technology 出版日期： 2016-03-19 出處： IET microwaves, antennas & propagation, 2016-03, Vol.10 (4), p.464-470 資源來源： Wiley Online Library (Open Access collection) 版權： The Institution of Engineering and Technology 版權： 2016 The Institution of Engineering and Technology 識別號： ISSN: 1751-8725 識別號： EISSN: 1751-8733 識別號： DOI: 10.1049/iet-map.2015.0530
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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