Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed. 其他題名： TED 出版者： New York, NY: IEEE 出版日期： 2013-10-01 出處： IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3596-3600 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2013.2278032 識別號： CODEN: IETDAI
