Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer

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Title:	Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer
Authors:	駱佳納;Ramesh, R.;Loganathan, R.;Menon, Sumithra Sivadas;Baskar, K.;Singh, Shubra
Contributors:	資訊電機學院電機工程學系
Keywords:	Aluminum gallium nitrides;energy;nanorods;optical properties;photoluminescence;vapors;X-ray diffraction;zinc oxide
Date:	2014-01-01
Issue Date:	2026-04-23 13:45:27 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： Controlled nucleation and growth of Zinc oxide nanorods is achieved on GaN, etched GaN and AlGaN/GaN heterostructure bottom layers grown by a metal organic chemical vapour deposition technique. The effects of the bottom crystalline layers on the structural, morphological and optical properties of the as grown ZnO nanorods have been investigated by high-resolution X-ray diffraction, scanning electron microscopy, photoluminescence and Raman measurements. HRXRD (0002) reciprocal-space mapping (RSMs) studies were performed on GaN and AlGaN/GaN layers before and after the growth of ZnO nanostructures to investigate the impact of strain upon the ZnO layer grown on GaN layers and AlGaN/GaN heterostructures. Raman intensity mapping shows the densely nucleated hexagonal pit like structures for the etched GaN layer, providing an enhanced surface area for primary nucleation suggesting that the growth species prefer to condense on locations with maximum binding energy. The increase in nucleation density for etched GaN layers also result in dense nanorods which exhibit better excitonic emission. Our studies suggest that ZnO nanostructures with improved optical and structural properties can be grown on etched-GaN as well as AlGaN/GaN heterostructures as the bottom layer. It is interesting to observe that the bottom GaN layer can be easily employed to determine the optical quality of ZnO layer. 出版日期： 2014-01-01 出處： RSC advances, 2014-01, Vol.4 (14), p.7112-7119 資源來源： Royal Society of Chemistry 識別號： ISSN: 2046-2069 識別號： EISSN: 2046-2069 識別號： DOI: 10.1039/c3ra45250f
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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