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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106831


    Title: Copper silicide/silicon nanowire heterostructures: In situ TEM observation of growth behaviors and electron transport properties
    Authors: 辛正倫;Chiu, Chung-Hua;Huang, Chun-Wei;Chen, Jui-Yuan;Huang, Yu-Ting;Hu, Jung-Chih;Chen, Lien-Tai;Hsin, Cheng-Lun;Wu, Wen-Wei
    Contributors: 資訊電機學院電機工程學系
    Keywords: Copper - chemistry;Electron Transport;Electronics;Microscopy, Electron, Transmission;Nanowires - chemistry;Silicon - chemistry;Temperature
    Date: 2013-06-07
    Issue Date: 2026-04-23 13:46:07 (UTC+8)
    Publisher: Royal Society of Chemistry;England: Royal Society of Chemistry (RSC)
    Abstract: 摘要: Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.
    其他題名: Nanoscale
    出版者: England: Royal Society of Chemistry (RSC)
    出版日期: 2013-06-07
    出處: Nanoscale, 2013-06, Vol.5 (11), p.5086-
    識別號: ISSN: 2040-3364
    識別號: ISSN: 2040-3372
    識別號: EISSN: 2040-3372
    識別號: DOI: 10.1039/c3nr33302g
    識別號: PMID: 23640615
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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