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| 題名: | Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays |
| 作者: | 姚毓峰;Liao, Che-Hao;Chang, Wen-Ming;Yao, Yu-Feng;Chen, Hao-Tsung;Su, Chia-Ying;Chen, Chih-Yen;Hsieh, Chieh;Chen, Horng-Shyang;Tu, Charng-Gan;Kiang, Yean-Woei;Yang, C. C.;Hsu, Ta-Cheng |
| 貢獻者: | 資訊電機學院電機工程學系 |
| 關鍵詞: | Cross sections (physics);Emission;Gallium nitrides;Indium gallium nitrides;Nanomaterials;Nanostructure;Quantum wells;Wavelengths |
| 日期: | 2013-02-07 |
| 上傳時間: | 2026-04-23 13:46:40 (UTC+8) |
| 出版者: | American Institute of Physics;AIP Publishing |
| 摘要: | 摘要： The cross-sectional sizes of the regularly patterned GaN nanorods (NRs) and InGaN/GaN quantum-well (QW) NRs of different heights and different hexagon orientations, which are grown on the patterned templates of different hole diameters, pitches, and crystal orientations, are compared. It is found that the cross-sectional size of the GaN NR, which is formed with the pulsed growth mode, is mainly controlled by the patterned hole diameter, and the thickness of the sidewall QW structure is mainly determined by the NR height. The cross-sectional size variation of GaN NR is interpreted by the quasi-three-dimensional nature of atom supply amount for precipitating a two-dimensional disk-shaped NR segment. The variation of the sidewall QW structure is explained by the condition of constituent atom supply in the gap volume between the neighboring NRs. Also, we compare the cathodoluminescence emission wavelengths among those samples of different growth conditions. Generally speaking, the QW NR with a smaller height, a larger cross-sectional size, or a larger pitch has a longer emission wavelength.
出版者： AIP Publishing
出版日期： 2013-02-07
出處： Journal of Applied Physics, 2013-02, Vol.113 (5)
資源來源： AIP Journals (American Institute of Physics)
識別號： ISSN: 0021-8979
識別號： EISSN: 1089-7550
識別號： DOI: 10.1063/1.4790710 |
| 顯示於類別: | [電機工程學系] 期刊論文
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