摘要： Copper catalyst assisted growth of GaN nanowires (NWs) on c-plane sapphire substrate has been investigated using Chemical Vapor Deposition Method. The impact of different reaction temperatures on the crystallinity have been studied by high resolution X-ray diffraction and Raman spectroscopy. The results has confirmed that the crystalline structure of GaN NWs are wurtzite. The surface morphology of the GaN nanowires have been analysed by scanning electron microscopy. The transmission electron microscopy (TEM) analysis reveals that the grown nanowires are single crystalline in nature. The diameter of NW decreases gradually from 1μm to 65nm and length is ∼7μm. Composition and impurities in GaN NWs have been studied by EDX analysis. The resistivity (ρ=5×101Ωcm), hole mobility (μp=2.97cm2/Vs) and hole concentration (p=4.17×1016cm−3) of GaN nanowires have been estimated by Hall measurement. Room temperature photoluminescence study shows that the near band edge emission of GaN NWs was red shifted to 3.26eV. 出版者： Elsevier GmbH 出版日期： 2016-04-01 出處： Optik (Stuttgart), 2016-04, Vol.127 (8), p.3762-3765 資源來源： ScienceDirect 版權： 2016 Elsevier GmbH 識別號： ISSN: 0030-4026 識別號： EISSN: 1618-1336 識別號： DOI: 10.1016/j.ijleo.2016.01.023
