Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition

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Title:	Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition
Authors:	姚毓峰;Liao, Che-Hao;Tu, Charng-Gan;Chang, Wen-Ming;Su, Chia-Ying;Shih, Pei-Ying;Chen, Hao-Tsung;Yao, Yu-Feng;Hsieh, Chieh;Chen, Horng-Shyang;Lin, Chun-Han;Yu, Chih-Kang;Kiang, Yean-Woei;Yang, C. C.
Contributors:	資訊電機學院電機工程學系
Date:	2014-01-01
Issue Date:	2026-04-23 13:47:03 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： To achieve green emission from the sidewall non-polar quantum wells (QWs) of a GaN nanorod (NR) light-emitting diode, regularly patterned InGaN/GaN QW NR arrays are grown under various growth conditions of indium supply rate, QW growth temperature, and QW growth time for comparing their emission wavelength variations of the top-face c-plane and sidewall m-plane QWs based on photoluminescence and cathodoluminescence (CL) measurements. Although the variation trends of QW emission wavelength by changing those growth conditions in the NR structure are similar to those in the planar structure, the emission wavelength range of the QWs on an NR is significantly shorter than that in a planar structure under the same growth conditions. Under the growth conditions for a longer NR QW emission wavelength, the difference of emission wavelength between the top-face and sidewall QWs is smaller. Also, the variation range of the emission wavelength from the sidewall QWs over different heights on the sidewall becomes larger. On the other hand, strain state analysis based on transmission electron microscopy is undertaken to calibrate the average QW widths and average indium contents in the two groups of QW of an NR. The variation trends of the calibrated QW widths and indium contents are consistent with those of the CL emission wavelengths from various portions of NR QWs. 其他題名： Opt Express 出版者： United States 出版日期： 2014-07-14 出處： Optics express, 2014-07, Vol.22 (14), p.17303 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.22.017303 識別號： PMID: 25090544
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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