Design and analysis for a 850 nm si photodiode using the body bias technique for low-voltage operation

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Title:	Design and analysis for a 850 nm si photodiode using the body bias technique for low-voltage operation
Authors:	辛裕明;Chou, Fang-Ping;Chen, Guan-Yu;Wang, Ching-Wen;Li, Zi-Ying;Liu, Yu-Chang;Huang, Wei-Kuo;Hsin, Yue-Ming
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Avalanche photodiodes;Bandwidth;CMOS ICs;CMOS integrated circuits;Current measurement;Electrodes;Electronics;Exact sciences and technology;Optoelectronic devices;photo detectors;Photoconductivity;Photodiodes;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Silicon
Date:	2013-02-04
Issue Date:	2026-04-23 13:47:23 (UTC+8)
Publisher:	New York, NY: IEEE
Abstract:	摘要： This study presents a design of the body contact in an 850 nm Si photodiode (PD) fabricated using standard 0.18-μm CMOS technology, and presents a systematic investigation of its effects on PD performance. This study confirms a good PD performance within 3 V bias and the establishment of the body current by directly measuring the body current, PD capacitance, and photocurrents. The body current from the biasing body contact was designed to eliminate the slow diffusion photocarriers in the substrate and increase bandwidth. The highest responsivity of 1.2 A/W was obtained from the PD without the body current, with biasing in the avalanche region. Adding the body bias increased the optimal bandwidth from 2.51 to 3.11 GHz, but reduced responsivity. However, the operating bias of the Si PD in the avalanche region was high, making it unsuitable for practical applications. While biasing PD at a low 3 V with a coordinated body bias, a bandwidth of 2.46 GHz was obtained with an acceptable responsivity of 0.1 A/W to allow low-voltage operation. 其他題名： JLT 出版者： New York, NY: IEEE 出版日期： 2013-03-15 出處： Journal of Lightwave Technology, 2013-03, Vol.31 (6), p.936-941 資源來源： IEEE Xplore (NTUSG) 版權： 2014 INIST-CNRS 識別號： ISSN: 0733-8724 識別號： EISSN: 1558-2213 識別號： DOI: 10.1109/JLT.2013.2239606 識別號： CODEN: JLTEDG
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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