Design and Analysis of a $Ka$-Band Monolithic High-Efficiency Frequency Quadrupler Using GaAs HBT-HEMT Common-Base/Common-Source Balanced Topology

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Title:	Design and Analysis of a $Ka$-Band Monolithic High-Efficiency Frequency Quadrupler Using GaAs HBT-HEMT Common-Base/Common-Source Balanced Topology
Authors:	傅家相;Chen, Guan-Yu;Chang, Hong-Yeh;Weng, Shou-Hsien;Shen, Chih-Chun;Yeh, Yen-Liang;Fu, Jia-Shiang;Hsin, Yue-Ming;Wang, Yu-Chi
Contributors:	資訊電機學院電機工程學系
Keywords:	Frequency conversion;GaAs;Harmonic analysis;HEMTs;heterojunction bipolar transistor (HBT);Heterojunction bipolar transistors;high electron-mobility transistor (HEMT);Impedance matching;microwave circuits;monolithic microwave integrated circuit (MMIC);multipliers;Power generation;Power system harmonics
Date:	2013-08-26
Issue Date:	2026-04-23 13:47:50 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： A Ka-band monolithic high-efficiency frequency quadrupler using a GaAs heterojunction bipolar transistor and pseudomorphic high electron-mobility transistor technology is presented in this paper. The frequency quadrupler is constructed cascading two frequency doublers. The frequency doubler employs a modified common-base/common-source topology to enhance the second harmonic efficiently. The dc bias condition, harmonic output power, conversion gain, and efficiency for variable configurations are investigated. Two phase-shifter networks are used to reduce phase error and improve the fundamental rejection. Between 23-30 GHz, the proposed frequency quadrupler features a conversion gain of higher than -1 dB with an input power of 4 dBm. The maximum conversion gain is 2.7 dB at 28 GHz with an efficiency of up to 8% and a power-added efficiency of 3.6%. The maximum output 1-dB compression point (P 1 dB) and the saturation output power (P sat ) are higher than 7 and 8.2 dBm, respectively. The overall chip size is 2×1 mm 2 . 其他題名： TMTT 出版者： IEEE 出版日期： 2013-10-01 出處： IEEE transactions on microwave theory and techniques, 2013-10, Vol.61 (10), p.3674-3689 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0018-9480 識別號： EISSN: 1557-9670 識別號： DOI: 10.1109/TMTT.2013.2277991 識別號： CODEN: IETMAB
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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