Design and analysis of a w-band divide-by-three injection-locked frequency divider using second harmonic enhancement technique

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Title:	Design and analysis of a w-band divide-by-three injection-locked frequency divider using second harmonic enhancement technique
Authors:	張鴻埜;Yeh, Yen-Liang;Chang, Hong-Yeh
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Capacitance;Circuit properties;Circuits of signal characteristics conditioning (including delay circuits);CMOS;Design engineering;Design. Technologies. Operation analysis. Testing;Direct current;divide-by-three;Electric, optical and optoelectronic circuits;Electronic circuits;Electronics;Exact sciences and technology;Frequency conversion;Frequency dividers;Harmonic analysis;Harmonics;Inductors;injection-locked frequency divider (ILFD);Injectors;Integrated circuits;Locking;Oscillators;Oscillators, resonators, synthetizers;phase-locked loop (PLL);Power consumption;Power demand;Q factor;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Signal convertors;Tuning
Date:	2012-04-05
Issue Date:	2026-04-23 13:48:03 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： In this paper, we present design and analysis of a W -band divide-by-three injection-locked frequency divider (ILFD) in 90 nm CMOS process. Based on the proposed topology, the locking range can be enhanced without additional dc power consumption due to the boost of the second harmonic in the ILFD, and the small input capacitance is more feasible for W -Band PLL integration. The locking range of the ILFD is investigated to obtain a theoretical model. From the analysis, the locking range is proportional to the device size of the injectors and the amplitude of the injection signal. In addition, the locking range can be enhanced with a proper gate dc bias of the injectors. The measured locking range of the proposed ILFD is from 91.4 to 93.5 GHz without varactor tuning, and the output power is higher than -15 dBm. The core dc power consumption is 1.5 mW with a supply voltage of 0.7 V. 其他題名： TMTT 出版者： New York, NY: IEEE 出版日期： 2012-06-01 出處： IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1617-1625 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 識別號： ISSN: 0018-9480 識別號： EISSN: 1557-9670 識別號： DOI: 10.1109/TMTT.2012.2189244 識別號： CODEN: IETMAB
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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