摘要： Anodic bonding is a frequently used nonintermediate wafer-bonding technique for use in MEMS. However, it has a minimum bonding time for a 4 in silicon/glass wafer that is generally limited to the order of several minutes because of the gas-trapping problem that occurs in the bonded interface when a conventional bonding electrode is used. Therefore, the purpose of this study was to develop a novel conical bonding electrode, which shortens the bonding time and solves the gas-trapping problem of the bonded interface. The 4 in silicon/glass wafers fitted with the proposed electrode exhibited a bonding ratio of 99.89% and an average bonding strength of around 15 MPa, which was attained within 15 s, at a bonding voltage of 900 V and a bonding temperature of 400 °C. A comprehensive series of experiments was performed to validate the excellent bonding performance of the proposed conical electrode. 其他題名： JMM 其他題名： J. Micromech. Microeng 出版者： Bristol: IOP Publishing 出版日期： 2014-10-01 出處： Journal of micromechanics and microengineering, 2014-10, Vol.24 (10), p.105003-8 資源來源： Institute of Physics Journals 版權： 2014 IOP Publishing Ltd 版權： 2015 INIST-CNRS 識別號： ISSN: 0960-1317 識別號： EISSN: 1361-6439 識別號： DOI: 10.1088/0960-1317/24/10/105003 識別號： CODEN: JMMIEZ
