Design of dual-band millimeter-wave antenna-in-package using flip-chip assembly

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題名:	Design of dual-band millimeter-wave antenna-in-package using flip-chip assembly
作者:	丘增杰;Lin, Ta-Yeh;Chiu, Tsenchieh;Chang, Da-Chiang
貢獻者:	資訊電機學院電機工程學系
關鍵詞:	Antenna measurements;Apertures;Cavity resonators;CMOS integrated circuits;CMOS process;dual band;flip-chip assembly;Gain;integrated passive device (IPD) process;millimeter wave (mmW);on-chip antenna;Substrates;Wireless communications
日期:	2014-01-01
上傳時間:	2026-04-23 13:51:24 (UTC+8)
出版者:	Institute of Electrical and Electronics Engineers Inc.;Piscataway: IEEE
摘要:	摘要： A dual-band antenna-in-package for millimeter-wave (mmW) applications is presented in the paper. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and integrated passive device substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1% and 5.8%, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band mmW high-data-rate wireless communication systems. 其他題名： TCPMT 出版者： Piscataway: IEEE 出版日期： 2014-03-01 出處： IEEE transactions on components, packaging, and manufacturing technology (2011), 2014-03, Vol.4 (3), p.385-391 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2014 識別號： ISSN: 2156-3950 識別號： EISSN: 2156-3985 識別號： DOI: 10.1109/TCPMT.2014.2300166 識別號： CODEN: ITCPC8
顯示於類別:	[電機工程學系] 期刊論文

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