Institution of Engineering and Technology;The Institution of Engineering and Technology
摘要:
摘要： The successful fabrication of InAlSb/InAs and InAlSb/InAsSb HFETs using recessed gate technology is reported. Epitaxial growth, device fabrication and characterisation are discussed in this Letter. A comparison of the two kinds of HFETs shows that the use of Sb in the InAs channel layer can effectively reduce the gate leakage resulting from the band-to-band tunnelling. This improvement is primarily because of increased separation between the conduction band edge of the InAsSb channel layer and the valence band edge of the InAlSb top barrier layer. An InAlSb/InAsSb HFET with 2 μm gate length and 50 μm gate width shows ID = 596 mA/mm and gm = 1 S/mm. 出版者： The Institution of Engineering and Technology 出版日期： 2013-08-01 出處： Electronics letters, 2013-08, Vol.49 (16), p.1026-1028 資源來源： Wiley Online Library Open Access 版權： The Institution of Engineering and Technology 版權： 2020 The Institution of Engineering and Technology 識別號： ISSN: 0013-5194 識別號： ISSN: 1350-911X 識別號： EISSN: 1350-911X 識別號： DOI: 10.1049/el.2013.0788
