Device characteristics of InGaSb/AlSb high-hole-mobility FETs

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107041

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107041

Title:	Device characteristics of InGaSb/AlSb high-hole-mobility FETs
Authors:	辛裕明;Ho, Han-Chieh;Gao, Zon-Yan;Lin, Heng-Kuang;Chiu, Pei-Chin;Hsin, Yue-Ming;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Buffer layers;Compound structure devices;Electronics;Exact sciences and technology;HEMTs;Heterojunction field-effect transistors (HFETs);InGaSb/AlSb;Logic gates;MODFETs;Scattering;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Temperature measurement;Transistors
Date:	2012-05-22
Issue Date:	2026-04-23 13:54:06 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4 Ga 0.6 Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2 /V·s with carrier concentration of 1.3 ×10 12 cm -2 was achieved. A 0.2- μm-gate-length In 0.4 Ga 0.6 Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively. 其他題名： LED 出版者： New York, NY: IEEE 出版日期： 2012-07-01 出處： IEEE Electron Device Letters, 2012-07, Vol.33 (7), p.964-966 資源來源： IEEE Xplore (NTUSG) 版權： 2015 INIST-CNRS 識別號： ISSN: 0741-3106 識別號： EISSN: 1558-0563 識別號： DOI: 10.1109/LED.2012.2193656 識別號： CODEN: EDLEDZ
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	15	View/Open

社群 sharing

Loading...