Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107048

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107048

Title:	Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal
Authors:	綦振瀛;Chiu, Hsien-Chin;Lin, Wen-Yu;Chou, Chia-Yi;Yang, Shih-Hsien;Mai, Kai-Di;Chiu, Pei-chin;Hsueh, W.J.;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	AlSb;Devices;High electron mobility transistors;Indium arsenides;Iridium;Schottky barrier height;Secondary ion mass spectrometry;Semiconductor devices;Silicon substrates;Stability;Stresses
Date:	2015-04-20
Issue Date:	2026-04-23 13:54:37 (UTC+8)
Publisher:	Elsevier;Elsevier B.V
Abstract:	摘要： [Display omitted] •The Ir-gate AlSb/InAs HEMT on Si substrate has been studied with reliability evaluation.•The Ir-gate exhibited a superior metal work function.•The Schottky barrier height of InAs/AlSb on silicon was improved.•TEM, SIMS, and low frequency noise measurement were adopted to proof device stability. In this work, the 6-inch AlSb/InAs on Si (001) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses. 出版者： Elsevier B.V 出版日期： 2015-04-20 出處： Microelectronic engineering, 2015-04, Vol.138, p.17-20 版權： 2015 Elsevier B.V. 識別號： ISSN: 0167-9317 識別號： EISSN: 1873-5568 識別號： DOI: 10.1016/j.mee.2015.01.017
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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