Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

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Title:	Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions
Authors:	姚毓峰;Foster, G. M.;Faber, G.;Yao, Y.-F.;Yang, C. C.;Heller, E. R.;Look, D. C.;Brillson, L. J.
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied physics;Buffer layers;Cathodoluminescence;Electrical properties;Electron mobility;Epitaxial growth;Hall effect;Homojunctions;Molecular beam epitaxy;Photovoltaic cells;Specific heat;Spectroscopy;Spectrum analysis;Zinc oxide
Date:	2016-10-03
Issue Date:	2026-04-23 13:55:00 (UTC+8)
Publisher:	American Institute of Physics;Melville: American Institute of Physics
Abstract:	摘要： Due to a strong Fermi-level mismatch, about 10% of the electrons in a 5-nm-thick highly Ga-doped ZnO (GZO) layer grown by molecular beam epitaxy at 250 °C on an undoped ZnO buffer layer transfer to the ZnO (Debye leakage), causing the measured Hall-effect mobility (μH) of the GZO/ZnO combination to remarkably increase from 34 cm2/V s, in thick GZO, to 64 cm2/V s. From previous characterization of the GZO, it is known that ND = [Ga] = 1.04 × 1021 and NA = [VZn] = 1.03 × 1020 cm−3, where ND, NA, and [VZn] are the donor, acceptor, and Zn-vacancy concentrations, respectively. In the ZnO, ND = 3.04 × 1019 and NA = 8.10 × 1018 cm−3. Assuming the interface is abrupt, theory predicts μH = 61 cm2/V s, with no adjustable parameters. The assumption of abruptness in [Ga] and [VZn] profiles is confirmed directly with a differential form of depth-resolved cathodoluminescence spectroscopy coupled with X-ray photoelectron spectroscopy. An anneal in Ar at 500 °C for 10 min somewhat broadens the profiles but causes no appreciable degradation in μH and other electrical properties. 出版者： Melville: American Institute of Physics 出版日期： 2016-10-03 出處： Applied physics letters, 2016-10, Vol.109 (14) 資源來源： AIP Journals (American Institute of Physics) 版權： Author(s) 版權： 2016 Author(s). Published by AIP Publishing. 識別號： ISSN: 0003-6951 識別號： ISSN: 1520-8842 識別號： ISSN: 1077-3118 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4963888 識別號： CODEN: APPLAB
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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