Dynamic evolution of conducting nanofilament in resistive switching memories

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107106

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107106

Title:	Dynamic evolution of conducting nanofilament in resistive switching memories
Authors:	辛正倫;Chen, Jui-Yuan;Hsin, Cheng-Lun;Huang, Chun-Wei;Chiu, Chung-Hua;Huang, Yu-Ting;Lin, Su-Jien;Wu, Wen-Wei;Chen, Lih-Juann
Contributors:	資訊電機學院電機工程學系
Keywords:	Atomic structure;Condensed matter: structure, mechanical and thermal properties;Conduction;Diffusion in nanoscale solids;Diffusion in solids;Electron energy loss spectroscopy;Exact sciences and technology;Filaments;Nanostructure;Physics;Switching;Transport properties of condensed matter (nonelectronic);Zinc;Zinc oxide
Date:	2013-08-14
Issue Date:	2026-04-23 13:56:43 (UTC+8)
Publisher:	American Chemical Society;Washington, DC: American Chemical Society
Abstract:	摘要： Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current–voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO1–x and ZnO. 其他題名： Nano Lett 出版者： Washington, DC: American Chemical Society 出版日期： 2013-08-14 出處： Nano Letters, 2013-08, Vol.13 (8), p.3671-3677 資源來源： American Chemical Society Journals 版權： Copyright © 2013 American Chemical Society 版權： 2014 INIST-CNRS 識別號： ISSN: 1530-6984 識別號： ISSN: 1530-6992 識別號： EISSN: 1530-6992 識別號： DOI: 10.1021/nl4015638 識別號： PMID: 23855543
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	31	View/Open

社群 sharing

Loading...