資料載入中.....
|
請使用永久網址來引用或連結此文件:
https://ir.lib.ncu.edu.tw/handle/987654321/107132
|
| 題名: | Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode |
| 作者: | 姚毓峰;Chen, Chih-Yen;Hsieh, Chieh;Liao, Che-Hao;Chung, Wei-Lun;Chen, Hao-Tsung;Cao, Wenyu;Chang, Wen-Ming;Chen, Horng-Shyang;Yao, Yu-Feng;Ting, Shao-Ying;Kiang, Yean-Woei;Yang, Chih-Chung (C. C.);Hu, Xiaodong |
| 貢獻者: | 資訊電機學院電機工程學系 |
| 關鍵詞: | Calibration;Computer Simulation;Equipment Design;Gallium - chemistry;Hot Temperature;Indium - chemistry;Light;Luminescence;Optics and Photonics;Photochemistry - methods;Temperature;X-Ray Diffraction |
| 日期: | 2012-05-07 |
| 上傳時間: | 2026-04-23 13:57:31 (UTC+8) |
| 出版者: | The Optical Society;United States |
| 摘要: | 摘要： The counteraction between the increased carrier localization effect due to the change of composition nanostructure in the quantum wells (QWs), which is caused by the thermal annealing process, and the enhanced quantum-confined Stark effect in the QWs due to the increased piezoelectric field, which is caused by the increased p-type layer thickness, when the p-type layer is grown at a high temperature on the InGaN/GaN QWs of a high-indium light-emitting diode (LED) is demonstrated. Temperature- and excitation power-dependent photoluminescence (PL) measurements are performed on three groups of sample, including 1) the samples with both effects of thermal annealing and increased p-type thickness, 2) those only with the similar thermal annealing process, and 3) those with increased overgrowth thickness and minimized thermal annealing effect. From the comparisons of emission wavelength, internal quantum efficiency (IQE), spectral shift with increasing PL excitation level, and calibrated activation energy of carrier localization between various samples in the three groups, one can clearly see the individual effects of thermal annealing and increased p-type layer thickness. The counteraction leads to increased IQE and blue-shifted emission spectrum with increasing p-type thickness when the thickness is below a certain value (20-nm p-AlGaN plus 60-nm p-GaN under our growth conditions). Beyond this thickness, the IQE value decreases and the emission spectrum red shifts with increasing p-type thickness.
其他題名： Opt Express
出版者： United States
出版日期： 2012-05-07
出處： Optics express, 2012-05, Vol.20 (10), p.11321
資源來源： Optica Publishing Group Journals
識別號： ISSN: 1094-4087
識別號： EISSN: 1094-4087
識別號： DOI: 10.1364/OE.20.011321
識別號： PMID: 22565753 |
| 顯示於類別: | [電機工程學系] 期刊論文
|
文件中的檔案:
| 檔案 |
描述 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | | 0Kb | HTML | 14 | 檢視/開啟 |
|
在NCUIR中所有的資料項目都受到原著作權保護.
|
