摘要： Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 cm in the experimental results and up to 14.93 cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics. 其他題名： NANO 其他題名： Nanotechnology 出版者： England: IOP Publishing 出版日期： 2016-02-12 出處： Nanotechnology, 2016-02, Vol.27 (6), p.65704-065704 資源來源： Institute of Physics Journals 版權： 2016 IOP Publishing Ltd 識別號： ISSN: 0957-4484 識別號： EISSN: 1361-6528 識別號： DOI: 10.1088/0957-4484/27/6/065704 識別號： PMID: 26754454 識別號： CODEN: NNOTER
