Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107189

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Title:	Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications
Authors:	胡璧合;Yu, Chang-Hung;Fan, Ming-Long;Yu, Kuan-Chin;Hu, Vita Pi-Ho;Su, Pin;Chuang, Ching-Te
Contributors:	資訊電機學院電機工程學系
Keywords:	2-D materials;bilayer;Carrier mobility;Channels;Contact resistance;Devices;Electrostatics;Metals;monolayer;Monolayers;Performance evaluation;Resistance;SRAM cell;SRAM cells;Stability;Static random access memory;transition metal dichalcogenide (TMD);Transition metals;Wireless sensor networks
Date:	2016-02-01
Issue Date:	2026-04-23 13:59:21 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
Abstract:	摘要： For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. 其他題名： TED 出版者： New York: IEEE 出版日期： 2016-02-01 出處： IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.625-630 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2015.2505064 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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