Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT) process are reported in this paper. The gain-bandwidth analysis of the Darlington amplifiers using HEMT-HBT, HBT-HEMT, HEMT-HEMT, and HBT-HBT configurations are presented. The bandwidth, gain, input, and output impedances are investigated with transistor size, feedback resistances, and series peaking inductance. The design methodology of the broadband Darlington amplifier in the HBT-HEMT process is successfully developed, and the direct-coupled technique is also addressed for high-speed data communications. Furthermore, two monolithic HEMT-HBT and HEMT-HEMT Darlington amplifiers are achieved from dc to millimeter wave, and successfully evaluated with a 25-Gb/s eye diagram. The HEMT-HBT Darlington amplifier demonstrates the best gain-bandwidth product with good input/output return losses among the four configurations. 其他題名： TMTT 出版者： New York, NY: IEEE 出版日期： 2012-11-01 出處： IEEE Transactions on Microwave Theory and Techniques, 2012-11, Vol.60 (11), p.3458-3473 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 識別號： ISSN: 0018-9480 識別號： EISSN: 1557-9670 識別號： DOI: 10.1109/TMTT.2012.2215051 識別號： CODEN: IETMAB
