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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107289


    Title: GaN light-emitting diodes for up to 5.5-Gb/s short-reach data transmission over SI-POF
    Authors: 許晉瑋;Vinogradov, Juri;Kruglov, Roman;Chi, Kai-Lun;Shi, Jin-Wei;Bloos, Martin;Loquai, Sven;Ziemann, Olaf
    Contributors: 資訊電機學院電機工程學系
    Keywords: Bit rate;Data communication;Data transmission;Dispersions;Gallium nitride;Gallium nitrides;High speed;Light emitting diodes;Modulation;Optical fiber communication;Optical fiber devices;Optical fibers;Photonics
    Date: 2014-12-15
    Issue Date: 2026-04-23 14:06:11 (UTC+8)
    Publisher: Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
    Abstract: 摘要: We report a high-speed data transmission over a 1-mm diameter step-index polymer optical fiber (SI-POF) with GaN light-emitting diodes (LEDs) operating at 435 and 475 nm. The modulation bandwidths of the LEDs at 40 mA were 180 and 300 MHz, respectively. A maximum bit rate of 5.5 Gb/s was achieved with a 475-nm GaN LED at -1.8-dBm fiber-coupled power over a 1-m SI-POF employing 4-pulse-amplitude modulation format. Compared with the performance of a high-speed red resonant-cavity LED under the same test setup, the chromatic dispersion reduces the potential of the GaN LED-based system when the transmission distance is longer than 30 m.
    其他題名: LPT
    出版者: New York: IEEE
    出版日期: 2014-12-15
    出處: IEEE photonics technology letters, 2014-12, Vol.26 (24), p.2473-2475
    資源來源: IEEE Electronic Library (IEL)
    版權: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2014
    識別號: ISSN: 1041-1135
    識別號: EISSN: 1941-0174
    識別號: DOI: 10.1109/LPT.2014.2359073
    識別號: CODEN: IPTLEL
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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