GaN-based dual-color LEDs with p-type insertion layer for controlling the ratio of two-color intensities

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107293

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107293

Title:	GaN-based dual-color LEDs with p-type insertion layer for controlling the ratio of two-color intensities
Authors:	許晉瑋;Chi, Kai-Lun;Yeh, Shu-Ting;Yeh, Yu-Hsiang;Lin, Kun-Yan;Shi, Jin-Wei;Wu, Yuh-Renn;Lee, Ming Lun;Sheu, Jinn-Kong
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Carrier dynamic;Charge carrier processes;Compound structure devices;Cross-disciplinary physics: materials science;rheology;Current measurement;Doping;efficiency droop;Electronics;Exact sciences and technology;Gallium nitride;LEDs;Light emitting diodes;Materials science;Nanoscale materials and structures: fabrication and characterization;Physics;Quantum well devices;Quantum wells;Radiative recombination;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Date:	2013-07-29
Issue Date:	2026-04-23 14:06:37 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： In this paper, a novel GaN-based dual-color LED for phosphor-free white-light generation has been demonstrated. By inserting p-type layers with different p-type doping density and thickness into active regions of dual-color GaN LEDs, we can control the ratio of output light intensities from quantum-wells near n- and p-sides. With an optimum sheet charge density of such insertion layer, the intensities of these two colors can be balanced under a much lower driving-current density (45 versus 450 A/cm 2 ) compared with that of reference device without such insertion layer. A 2-D finite-element Poisson and drift-diffusion self-consistent solver including the indium fluctuation is used to design and simulate the device performances. The experimental and simulation results match very well. 其他題名： TED 出版者： New York, NY: IEEE 出版日期： 2013-09-01 出處： IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2821-2826 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2013.2272803 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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