Institute of Electrical and Electronics Engineers Inc.;New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
摘要:
摘要： We first demonstrate a novel high-speed and high-power p-i-n photodiode with a cutoff wavelength at [Formula Omitted]. This device is composed of a partially depleted p-type Ga0.8In0.2As0.16Sb0.84 photo-absorption layer grown on GaSb substrate in order to enhance its speed and saturation power performance. With proper passivation processes, a low dark current ([Formula Omitted]) and wide (6 GHz) optical-to-electrical (O-E) bandwidth can be simultaneously achieved with a miniaturized size of active mesa diameter ([Formula Omitted]) under 1.55-[Formula Omitted] optical wavelength excitation. The electron/hole drift-velocity and electron mobility across the Ga0.8In0.2As0.16Sb0.84 active layer can further be estimated based on the extracted internal response time and device modeling technique. Using the heterodyne-beating setup at 1.55-[Formula Omitted] wavelength, the demonstrated device shows a saturation current at [Formula Omitted] mA (at 6-GHz operating frequency), which is mainly limited by the space-charge (electron/hole) induced screening effect at the depleted absorption region. 出版者： New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 出版日期： 2016-07-01 出處： IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2796 資源來源： IEEE Electronic Library (IEL) Journals 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2016.2561202
