Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/107312

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/107312

题名:	Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
作者:	綦振瀛;Liao, Wen-Chia;Chen, Yan-Lun;Chen, Zheng-Xing;Chyi, Jen-Inn;Hsin, Yue-Ming
贡献者:	資訊電機學院電機工程學系
关键词:	2014 International Symposium on Next-Generation Electronics (ISNE 2014);Aluminum gallium nitrides;Buffer layers;Chemistry and Materials Science;Current leakage;Field effect transistors;Gallium nitrides;Heterostructures;Insulators;Leakage;Leakage current;Materials Science;MIS (semiconductors);Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering;Semiconductor devices;Trapping
日期:	2014-01-01
上传时间:	2026-04-23 14:07:10 (UTC+8)
出版者:	Springer New York;New York: Springer New York
摘要:	摘要： This study examined the correlation between the off-state leakage current and dynamic on-resistance (R ON ) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The R ON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of drain-source bias stress. The gate insulator in the MISHFET effectively reduced the electron injection from the gate, thereby mitigating the degradation in dynamic switching performance. However, at relaxation times exceeding 10 ms, additional detrapping occurred in both the SGHFET and MISHFET when the applied stress exceeded a critical voltage level, 50 V for the SGHFET and 60 V for MISHFET, resulting in resistive leakage current build-up and the formation of hot carriers. These high-energy carriers acted as ionized traps in the channel or buffer layers, which subsequently caused additional trapping and detrapping to occur in both HFETs during the dynamic switching test conducted. 其他題名： Nanoscale Res Lett 出版者： New York: Springer New York 出版日期： 2014-09-08 出處： Nanoscale research letters, 2014-09, Vol.9 (1), p.474-474, Article 474 資源來源： ProQuest Open Access Content Collection 版權： Liao et al.; licensee Springer. 2014. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. 版權： Copyright Springer Nature B.V. Dec 2014 版權： Copyright © 2014 Liao et al.; licensee Springer. 2014 Liao et al.; licensee Springer. 識別號： ISSN: 1556-276X 識別號： ISSN: 1931-7573 識別號： EISSN: 1556-276X 識別號： DOI: 10.1186/1556-276X-9-474 識別號： PMID: 25258601
显示于类别:	[電機工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	14	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....