Gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO 2 /InAs p MOS Capacitors

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107316

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107316

Title:	Gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO 2 /InAs p MOS Capacitors
Authors:	綦振瀛;Chien, Chung-Yen;Hsu, Jei-Wei;Chiu, Pei-Chin;Chyi, Jen-Inn;Li, Pei-Wen
Contributors:	資訊電機學院電機工程學系
Date:	2012-08-17
Issue Date:	2026-04-23 14:07:15 (UTC+8)
Publisher:	Hindawi Publishing Corporation;Hindawi Limiteds
Abstract:	出版者： Hindawi Limiteds 出版日期： 2012-12-01 出處： Active and Passive Electronic Components, 2012-12, Vol.2012, p.142-147 資源來源：華藝CEPS中文電子期刊服務識別號： ISSN: 0882-7516 識別號： DOI: 10.1155/2012/729328
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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