Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:
摘要： Germanium-based optoelectronic devices have the potential applications in optical communication and detections. In this letter, we demonstrated that high-quality Ge quasi-epilayer can be achieved by rapid-melting-growth and integrated-circuit compatible process. Raman and microscopy techniques revealed that the as-deposited Ge on the silicon substrate became quasi-single crystalline while nanocrystallites embedded within the Ge layer. The Ge/Si heterostructure photodetectors were fabricated with desirable responsivity of 0.22 A/W at -1 V reverse bias and the ratio of photocurrent and dark current is up to 2000 at -0.65 V. This technique demonstrated the possibility of monolithic integration of Ge photodetector for future optical communications at 1.31 μm in wavelength with Si electronic circuitry. 其他題名： LPT 出版者： IEEE 出版日期： 2015-06-15 出處： IEEE photonics technology letters, 2015-06, Vol.27 (12), p.1254-1256 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2015.2415837 識別號： CODEN: IPTLEL
