Growth and characterization of crack-free semi-polar (1-101) GaN on 7�-off (001) Si substrates by metal-organic chemical vapor deposition

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107338

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107338

Title:	Growth and characterization of crack-free semi-polar (1-101) GaN on 7�-off (001) Si substrates by metal-organic chemical vapor deposition
Authors:	綦振瀛;Liu, Hsueh-Hsing;Lin, Hsien-Yu;Liao, Chen-Zi;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Date:	2013-11-15
Issue Date:	2026-04-23 14:08:24 (UTC+8)
Publisher:	Electrochemical Society, Inc.;The Electrochemical Society
Abstract:	摘要： This paper reports a selective growth method for growing crack-free semi-polar (1-101) GaN on V-grooved 7°-off (001) Si substrates by using a reticular SiO2 mask. This method effectively reduces the effect of thermal stress on GaN so that crack-free (1-101) GaN films as thick as 1 μm are obtained after coalescence of the selectively grown hexagonal pyramids. Transmission electron microscopy investigations clearly show the presence of low dislocation density regions, which result from the bending of dislocations toward the {1-100} directions during the facet growth stage. The stress and corresponding localized surface defects in GaN grown on the patterned Si substrates are depicted by cathodoluminescence spectroscopy. 其他題名： ECS J. Solid State Sci. Technol 出版者： The Electrochemical Society 出版日期： 2013-01-01 出處： ECS journal of solid state science and technology, 2013-01, Vol.2 (8), p.N3001-N3005 版權： 2013 The Electrochemical Society 識別號： ISSN: 2162-8769 識別號： ISSN: 2162-8777 識別號： EISSN: 2162-8777 識別號： DOI: 10.1149/2.001308jss
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	17	View/Open

社群 sharing

Loading...