Growth of highly conductive Ga-doped ZnO nanoneedles

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107346

Title:	Growth of highly conductive Ga-doped ZnO nanoneedles
Authors:	姚毓峰;Yao, Yu-Feng;Tu, Charng-Gan;Chang, Ta-Wei;Chen, Hao-Tsung;Weng, Chi-Ming;Su, Chia-Ying;Hsieh, Chieh;Liao, Che-Hao;Kiang, Yean-Woei;Yang, C. C
Contributors:	資訊電機學院電機工程學系
Keywords:	catalysts;electric field;geometry;melting;nanosilver;silver;temperature;zinc oxide
Date:	2015-05-20
Issue Date:	2026-04-23 14:09:46 (UTC+8)
Publisher:	American Chemical Society;United States: American Chemical Society
Abstract:	摘要： The molecular beam epitaxy growth of highly degenerate Ga-doped ZnO (GaZnO) nanoneedles (NNs) based on the vapor–liquid–solid (VLS) growth mode using Ag nanoparticles (NPs) as the growth catalyst is demonstrated. It is shown that when the growth substrate temperature is sufficiently high, a portion of a Ag NP can be melted for serving as the catalyst to precipitate GaZnO on the residual Ag NP and form a GaZnO NN. Record-low turn-on and threshold electric fields in the field emission test of the grown GaZnO NNs are observed. Also, a record-high field enhancement factor in field emission is calibrated. Such superior field emission performances are attributed to a few factors, including (1) the low work function and high conductivity of the grown GaZnO NNs due to highly degenerate Ga doping, (2) the sharp-pointed geometry of the vertically aligned GaZnO NNs, (3) the Ag doping in VLS precipitation of GaZnO for further reducing NN resistivity, and (4) the residual small Ag NP at the NN tip for making the tip even sharper and tip conductivity even higher. 其他題名： ACS Appl. Mater. Interfaces 出版者： United States: American Chemical Society 出版日期： 2015-05-20 出處： ACS applied materials & interfaces, 2015-05, Vol.7 (19), p.10525-10533 資源來源： American Chemical Society Journals (NTUSG) 版權： Copyright © American Chemical Society 識別號： ISSN: 1944-8244 識別號： ISSN: 1944-8252 識別號： EISSN: 1944-8252 識別號： DOI: 10.1021/acsami.5b02063 識別號： PMID: 25927161
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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