Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm <inline-formula> <tex-math notation="TeX">\hbox{SiO}_{2}</tex-math></inline-formula> and a 20- <inline-formula> <tex-math notation="TeX">\mu\hbox{m}</tex-math></inline-formula> copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs. 其他題名： TDMR 出版者： New York: IEEE 出版日期： 2014-06-01 出處： IEEE Transactions on Device and Materials Reliability, 2014-06, Vol.14 (2), p.726-731 資源來源： IEL(IEEE/IET Electronic Library ) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2014 識別號： ISSN: 1530-4388 識別號： EISSN: 1558-2574 識別號： DOI: 10.1109/TDMR.2014.2317001 識別號： CODEN: ITDMA2
