High breakdown voltage and low thermal effect micromachined AlGaN/GaN HEMTs

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107375

Title:	High breakdown voltage and low thermal effect micromachined AlGaN/GaN HEMTs
Authors:	綦振瀛;Chiu, Hsien-Chin;Wang, Hsiang-Chun;Yang, Chih-Wei;Hsin, Yue-Ming;Chyi, Jen-Inn;Wu, Chang-Luen;Chang, Chian-Sern
Contributors:	資訊電機學院電機工程學系
Keywords:	Aluminum gallium nitride;Aluminum gallium nitrides;Electric potential;Gallium nitride;Gallium nitrides;HEMTs;High electron mobility transistors;Micromachining;Micromechanics;MODFETs;Semiconductor devices;Silicon;Substrates;Voltage
Date:	2014-01-01
Issue Date:	2026-04-23 14:10:23 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
Abstract:	摘要： This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm <inline-formula> <tex-math notation="TeX">\hbox{SiO}_{2}</tex-math></inline-formula> and a 20- <inline-formula> <tex-math notation="TeX">\mu\hbox{m}</tex-math></inline-formula> copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs. 其他題名： TDMR 出版者： New York: IEEE 出版日期： 2014-06-01 出處： IEEE Transactions on Device and Materials Reliability, 2014-06, Vol.14 (2), p.726-731 資源來源： IEEE Xplore 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2014 識別號： ISSN: 1530-4388 識別號： EISSN: 1558-2574 識別號： DOI: 10.1109/TDMR.2014.2317001 識別號： CODEN: ITDMA2
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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