High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

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Title:	High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy
Authors:	綦振瀛;Chiu, Pei-Chin;Huang, Hsuan-Wei;Hsueh, Wei-Jen;Hsin, Yu-Ming;Chen, Cheng-Yu;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	A3. Molecular beam epitaxy;A3. Quantum wells;B2. Semiconducting III–V materials;B3. Field effect transistors;Crystal growth;Field effect transistors;Gates;Hole mobility;Molecular beam epitaxy;Quantum wells;Semiconductor devices;Silicon substrates
Date:	2015-07-28
Issue Date:	2026-04-23 14:10:58 (UTC+8)
Publisher:	Elsevier;Elsevier B.V
Abstract:	摘要： Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770cm2/Vs and 3060cm2/Vs have been achieved at room temperature and 77K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction. •Growth of InGaSb/AlSb quantum well field effect transistors on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored.•Hole mobility of 770cm2/Vs and 3060cm2/Vs has been achieved at room temperature and 77K, respectively.•Twins in the QWs do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction. 出版者： Elsevier B.V 出版日期： 2015-09-01 出處： Journal of crystal growth, 2015-09, Vol.425, p.385-388 版權： 2015 Elsevier B.V. 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2015.03.052
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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