High Modulation Bandwidth of a Light-Emitting Diode With Surface Plasmon Coupling

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Title:	High Modulation Bandwidth of a Light-Emitting Diode With Surface Plasmon Coupling
Authors:	姚毓峰;Lin, Chun-Han;Tu, Charng-Gan;Yao, Yu-Feng;Chen, Sheng-Hung;Su, Chia-Ying;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, Chih-Chung C. C.
Contributors:	資訊電機學院電機工程學系
Keywords:	Ag nanoparticle (NP);Capacitance;carrier decay rate;Couplings;Epitaxial growth;Fabrication;Light emitting diodes;light-emitting diode (LED);modulation bandwidth (MB);Resistance;surface plasmon (SP);Surface structures
Date:	2016-10-01
Issue Date:	2026-04-23 14:11:05 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
Abstract:	摘要： The enhancement of the modulation bandwidth (MB) of a light-emitting diode (LED) by reducing its mesa size, decreasing its active layer thickness, and inducing surface plasmon (SP) coupling with its quantum well (QW) is illustrated. The results are demonstrated by comparing three different LED surface structures, including bare p-GaN surface, Ga-doped ZnO current-spreading layer, and Ag nanoparticles for inducing SP coupling. In a single-QW LED with a circular mesa of 10 μm in radius, SP coupling leads to a record-high LED MB of 528.8 MHz in the visible range. A smaller RC time constant can generally lead to a higher MB. However, when the RC time constant is smaller than ~0.2 ns, its effect for increasing MB saturates. The results also confirm that the MB is essentially proportional to the square roots of carrier decay rate and injected current density. 其他題名： TED 出版者： New York: IEEE 出版日期： 2016-10-01 出處： IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3989-3995 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2016.2601604 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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