High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

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题名:	High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases
作者:	李依珊;Dai, Van-Truong;Lin, Sheng-Di;Lin, Shih-Wei;Lee, Yi-Shan;Zhang, Yin-Jie;Li, Liang-Chen;Lee, Chien-Ping
贡献者:	資訊電機學院電機工程學系
日期:	2014-02-24
上传时间:	2026-04-23 14:12:04 (UTC+8)
出版者:	United States
摘要:	摘要： A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources. 其他題名： Opt Express 出版者： United States 出版日期： 2014-02-24 出處： Optics express, 2014-02, Vol.22 (4), p.3811 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.22.003811 識別號： PMID: 24663701
显示于类别:	[電機工程學系] 期刊論文

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