High-Speed, high-efficiency, large-area p-i-n photodiode for application to optical interconnects from 0.85 to 1.55 μm Wavelengths

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Title:	High-Speed, high-efficiency, large-area p-i-n photodiode for application to optical interconnects from 0.85 to 1.55 μm Wavelengths
Authors:	許晉瑋;Shi, Jin-Wei;Cheng, Ying-Hung;Wun, Jhih-Min;Chi, Kai-Lun;Hsin, Yue-Ming;Benjamin, Seldon D.
Contributors:	資訊電機學院電機工程學系
Keywords:	Absorption;Bandwidth;Frequency measurement;Optical interconnect (OI);Optical interconnections;Photoconductivity;photodiode;Transient analysis;Wavelength measurement
Date:	2013-12-15
Issue Date:	2026-04-23 14:12:22 (UTC+8)
Publisher:	IEEE
Abstract:	摘要： We demonstrate a novel InP-based photodiode structure with large active diameter (55 μm) for > 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing the large absorption constant (>3 μm -1 ) of In 0.53Ga 0.47As-based p-type absorption layer at 0.85 μm wavelength excitation, the slow hole transport can be eliminated in our structure and the tradeoff between RC-limited bandwidth and carrier transient time can be greatly released due to the excellent characteristics of electron transport in the intrinsic and thick In 0.53Ga 0.47As layer (~4 μm). Furthermore, in order to minimize the serious surface (absorption) recombination in the top p-type In 0.53Ga 0.47 As absorption layer, an additional p-type In 0.52Al x Ga 0.48-xAs-graded bandgap layer (GBL) is grown above it. Such a GBL cannot only provide uniform photoabsorption profile, but also accelerates the electron diffusion process. Under -1 V bias, these devices can achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 μm wavelength operation, respectively. Clear eye-opening (error-free) with data rate up to around 30 Gbit/s have also been demonstrated at both wavelengths. 其他題名： JLT 出版者： IEEE 出版日期： 2013-12-15 出處： Journal of lightwave technology, 2013-12, Vol.31 (24), p.3956-3961 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0733-8724 識別號： EISSN: 1558-2213 識別號： DOI: 10.1109/JLT.2013.2278273 識別號： CODEN: JLTEDG
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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