Impact of quantum confinement on backgate-bias modulated threshold-voltage and subthreshold characteristics for ultra-thin-body GeOI MOSFETs

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Title:	Impact of quantum confinement on backgate-bias modulated threshold-voltage and subthreshold characteristics for ultra-thin-body GeOI MOSFETs
Authors:	胡璧合;Yu, Chang-Hung;Wu, Yu-Sheng;Hu, Vita Pi-Ho;Su, Pin
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Backgate bias;CMOS integrated circuits;Educational institutions;Effective mass;Electronics;Exact sciences and technology;germanium-on-insulator (GeOI);Mathematical model;MOSFETs;quantum confinement (QC);Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Sensitivity;Transistors;ultra-thin body (UTB)
Date:	2012-05-11
Issue Date:	2026-04-23 14:13:55 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： This paper investigates the impact of quantum confinement (QC) on the backgate-bias (V bg ) modulated subthreshold and threshold-voltage (V th ) characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical solution of the Schrödinger equation verified with TCAD numerical simulation. Our study indicates that the QC effect reduces the sensitivity of the subthreshold swing to V bg . In addition, the sensitivity of V th to V bg can be enhanced by the QC effect particularly for electrostatically well-behaved UTB MOSFETs with triangular potential well. Aside from that, the sensitivity of V th roll-off to V bg is reduced by the QC effect. Since Ge and Si channels exhibit different degrees of QC due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons between GeOI and SOI MOSFETs regarding the backgate-bias modulated threshold-voltage and sub-threshold characteristics are made. Our study may provide insights for multi-V th device/circuit designs using advanced UTB GeOI technologies. 其他題名： TED 出版者： New York, NY: IEEE 出版日期： 2012-07-01 出處： IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1851-1855 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2012.2194499 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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