Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs

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Title:	Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs
Authors:	胡璧合;Yu, Chang-Hung;Wu, Yu-Sheng;Hu, Vita Pi-Ho;Su, Pin
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Channels;Devices;Educational institutions;Electronics;Electrostatic integrity (EI);Electrostatics;Exact sciences and technology;germanium-on-insulator (GeOI);InGaAs-OI;Integrity;Materials;Mathematical model;Mathematical models;MOSFETs;Potential well;Quantum confinement;quantum confinement (QC);Schroedinger equation;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;subthreshold swing (SS);Swing;Transistors;ultra-thin-body (UTB)
Date:	2012-03-01
Issue Date:	2026-04-23 14:13:59 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrödinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made. 其他題名： TNANO 出版者： New York, NY: IEEE 出版日期： 2012-03-01 出處： IEEE transactions on nanotechnology, 2012-03, Vol.11 (2), p.287-291 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2012 識別號： ISSN: 1536-125X 識別號： EISSN: 1941-0085 識別號： DOI: 10.1109/TNANO.2011.2169084 識別號： CODEN: ITNECU
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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