Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer

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Title:	Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer
Authors:	綦振瀛;Lee, Geng-Yen;Tu, Po-Tsung;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Date:	2015-01-01
Issue Date:	2026-04-23 14:15:58 (UTC+8)
Publisher:	Japan Society of Applied Physics;The Japan Society of Applied Physics
Abstract:	摘要： The electrical characteristics of a series of AlInN high-electron-mobility transistors (HEMTs) with a GaN cap layer ranging from 0 to 26 nm are investigated for power switching applications. The breakdown voltage (VB), mobility of two-dimensional electron gas, on-state resistance (Ron), and dynamic Ron of the HEMTs are improved by increasing the cap layer thickness. The improved electrical characteristics are attributed to the GaN cap layer, which not only reduces the surface E-field but also raises the conduction band of the barrier layer and effectively prevents electrons from being trapped in the AlInN barrier and above. 其他題名： Appl. Phys. Express 出版者： The Japan Society of Applied Physics 出版日期： 2015-06-01 出處： Applied physics express, 2015-06, Vol.8 (6), p.64102 資源來源： Institute of Physics Journals 版權： 2015 The Japan Society of Applied Physics 識別號： ISSN: 1882-0778 識別號： EISSN: 1882-0786 識別號： DOI: 10.7567/APEX.8.064102 識別號： CODEN: APEPC4
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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