In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107520

Title:	In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories
Authors:	辛正倫;Huang, Yu-Ting;Yu, Shih-Ying;Hsin, Cheng-Lun;Huang, Chun-Wei;Kang, Chen-Fang;Chu, Fu-Hsuan;Chen, Jui-Yuan;Hu, Jung-Chih;Chen, Lien-Tai;He, Jr-Hau;Wu, Wen-Wei
Contributors:	資訊電機學院電機工程學系
Keywords:	Analytical chemistry;chemical analysis;chemical composition;computer hardware;energy-dispersive X-ray analysis;Memory;Nanowires;Oxygen;spectrometers;Transmission electron microscopy;zinc;zinc oxide
Date:	2013-04-16
Issue Date:	2026-04-23 14:16:14 (UTC+8)
Publisher:	American Chemical Society;United States: American Chemical Society
Abstract:	摘要： Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration. 其他題名： Anal. Chem 出版者： United States: American Chemical Society 出版日期： 2013-04-16 出處： Analytical Chemistry, 2013-04, Vol.85 (8), p.3955-3960 資源來源： American Chemical Society (ACS) Journals 版權： Copyright © 2013 American Chemical Society 版權： Copyright American Chemical Society Apr 16, 2013 識別號： ISSN: 0003-2700 識別號： ISSN: 1520-6882 識別號： EISSN: 1520-6882 識別號： DOI: 10.1021/ac303528m 識別號： PMID: 23461652 識別號： CODEN: ANCHAM
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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