InAs MOS devices passivated with molecular beam epitaxy-grown Gd 2O3 dielectrics

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题名:	InAs MOS devices passivated with molecular beam epitaxy-grown Gd 2O3 dielectrics
作者:	綦振瀛;Lin, C. A.;Huang, M. L.;Chiu, P.-C.;Lin, H.-K.;Chyi, J.-I.;Chiang, T. H.;Lee, W. C.;Chang, Y. C.;Chang, Y. H.;Brown, G. J.;Kwo, J.;Hong, M.
贡献者:	資訊電機學院電機工程學系
日期:	2012-01-01
上传时间:	2026-04-23 14:16:26 (UTC+8)
出版者:	AVS Science and Technology Society
摘要:	摘要： InAs MOS devices passivated with molecular beam epitaxy (MBE)-grown Gd2O3 2–3 monolayers thick followed by an Al2O3 cap have demonstrated excellent electrical performances and interfacial properties. Band offset energies of in situ atomic-layer-deposited (ALD)-Al2O3/MBE-Gd2O3/InAs and ALD-Al2O3/InAs were determined by in situ x-ray photoelectron spectroscopy in conjunction with Fowler–Nordheim tunneling current analysis. A conduction-band offset energy ( Δ E c ) and a valence-band offset energy of 2.3 and 3.92 eV for ALD-Al2O3/InAs were determined, respectively. The insertion of a Gd2O3 layer increases the value of Δ E c by nearly 0.1 eV as compared to the case for Al2O3 directly deposited on InAs. The distribution of interfacial density of states (D it) within the InAs bandgap, deduced by the conductance method at 77 K, gives a low D it value of 1012 cm−2 eV−1 near the conduction-band edge. Moreover, with energy band engineering in the heterostructure, gate-first depletion channel InAs MOSFETs have produced drain current density of 46 μA/μm and transconductance of 17 μS/μm for 12-μm-gate-length devices at 300 K. 出版日期： 2012-03 出處： Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2012-03, Vol.30 (2) 資源來源： AIP Journals (American Institute of Physics) 版權： American Vacuum Society 識別號： ISSN: 1071-1023 識別號： ISSN: 2166-2746 識別號： EISSN: 1520-8567 識別號： EISSN: 2166-2754 識別號： DOI: 10.1116/1.3678206 識別號： CODEN: JVTBD9
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