InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107558

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107558

Title:	InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment
Authors:	辛裕明;Ho, Han-Chieh;Gao, Zong-Yan;Lin, Heng-Kuang;Chiu, Pei-Chin;Hsin, Yue-Ming;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	aluminium compounds;Applied sciences;Circuit properties;DC performances;Electric, optical and optoelectronic circuits;Electronics;Exact sciences and technology;gallium compounds;gate‐length device;high electron mobility transistors;hydrogen plasma treatment;indium compounds;InGaSb‐AlSb;Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits;plasma materials processing;p‐channel HFET;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Semiconductor technology;size 0.2 mum;Transistors;voltage 0.47 V to 0 V
Date:	2013-03-28
Issue Date:	2026-04-23 14:17:13 (UTC+8)
Publisher:	Institution of Engineering and Technology;Stevenage: The Institution of Engineering and Technology
Abstract:	摘要： This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm. 出版者： Stevenage: The Institution of Engineering and Technology 出版日期： 2013-03-28 出處： Electronics letters, 2013-03, Vol.49 (7), p.499-500 資源來源： Wiley Online Library Open Access 版權： The Institution of Engineering and Technology 版權： 2020 The Institution of Engineering and Technology 版權： 2014 INIST-CNRS 識別號： ISSN: 0013-5194 識別號： ISSN: 1350-911X 識別號： EISSN: 1350-911X 識別號： DOI: 10.1049/el.2013.0430 識別號： CODEN: ELLEAK
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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