Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： In-plane gate transistors (IPGTs) with 20-μm channel widths are fabricated on samples with n -(InGa)As sheet resistance embedded in undoped GaAs matrix. A trade-off between effective current modulation and high saturation drain current is obtained by optimizing the doping density of the sheet resistance. The mechanism responsible for the transistor behaviors of the devices is due to the channel electron depletion related to the population of mobile surface electrons under different gate biases. The photocurrent measurements demonstrate that the IPGT architecture is a feasible approach for the applications of photodetectors. 其他題名： LED 出版者： New York, NY: IEEE 出版日期： 2013-06-01 出處： IEEE electron device letters, 2013-06, Vol.34 (6), p.780-782 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2013 識別號： ISSN: 0741-3106 識別號： EISSN: 1558-0563 識別號： DOI: 10.1109/LED.2013.2258456 識別號： CODEN: EDLEDZ
