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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107634


    Title: Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models
    Authors: 綦振瀛;Hsu, You-Ren;Kang, Yen-Wen;Fang, Jung-Ying;Lee, Geng-Yen;Chyi, Jen-Inn;Chang, Chung-ke;Huang, Chih-Cheng;Hsu, Chen-Pin;Huang, Tai-huang;Huang, Yu-Fen;Sun, Yuh-Chang;Hsu, Chia-Hsien;Chen, Chih-Chen;Li, Sheng-Shian;Yeh, J. Andrew;Yao, Da-Jeng;Ren, Fan;Wang, Yu-Lin
    Contributors: 資訊電機學院電機工程學系
    Keywords: Aluminum gallium nitrides;Assaying;Binding;Binding sites;Coronaviridae;Deoxyribonucleic acid;Dissociation constants;Gallium nitrides;GaN;HEMTs;High electron mobility transistors;SARS;SARS coronavirus;Semiconductor devices;Sensors
    Date: 2014-03-31
    Issue Date: 2026-04-23 14:20:28 (UTC+8)
    Publisher: Elsevier;Switzerland: Elsevier B.V
    Abstract: 摘要: AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). The sensing signals were the drain current change of the HEMTs induced by the protein–dsDNA binding. Binding-site models using surface coverage ratios were utilized to analyze the signals from the HEMT-based sensors to extract the dissociation constants and predict the number of binding sites. Two dissociation constants, KD1=0.0955nM, KD2=51.23nM, were obtained by fitting the experimental results into the two-binding-site model. The result shows that this technique is more competitive than isotope-labeling electrophoretic mobility shift assay (EMSA). We demonstrated that AlGaN/GaN HEMTs were highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleotide–protein interaction.
    其他題名: Sens Actuators B Chem
    出版者: Switzerland: Elsevier B.V
    出版日期: 2014-03-31
    出處: Sensors and actuators. B, Chemical, 2014-03, Vol.193, p.334-339
    版權: 2013 Elsevier B.V.
    版權: Copyright © 2013 Elsevier B.V. Published by Elsevier B.V. All rights reserved.
    版權: Copyright © 2013 Elsevier B.V. Published by Elsevier B.V. All rights reserved. 2013 Elsevier B.V.
    識別號: ISSN: 0925-4005
    識別號: ISSN: 1873-3077
    識別號: EISSN: 1873-3077
    識別號: EISSN: 0925-4005
    識別號: DOI: 10.1016/j.snb.2013.11.087
    識別號: PMID: 32288246
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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