Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

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Title:	Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors
Authors:	綦振瀛;Wang, S. Y.;Chang, C. A.;Chang, C. M.;Chen, S. H.;Ren, F.;Pearton, S. J.;Chyi, J.-I.
Contributors:	資訊電機學院電機工程學系
Keywords:	Composition effects;Concentration (composition);Emittance;Fermi surfaces;Heterojunction bipolar transistors;Indium gallium arsenides;Indium phosphides;Semiconductor devices
Date:	2012-08-13
Issue Date:	2026-04-23 14:20:37 (UTC+8)
Publisher:	American Institute of Physics
Abstract:	摘要： The emitter size effect of a series InGaAsSb base series of InP/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) with different emitter sizes is investigated. Compared to the InGaAs base HBTs, these devices exhibit much lower base surface recombination current. This is attributed to the surface Fermi level pinning near the valence band of the antimonide base. The effect of Sb composition and doping concentration of the base on the surface recombination current is well explained by the postulate. 出版日期： 2012-08-13 出處： Applied physics letters, 2012-08, Vol.101 (7), p.73507 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： ISSN: 1520-8842 識別號： ISSN: 1077-3118 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4745208
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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