Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

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Title:	Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements
Authors:	辛裕明;Liao, Wen-Chia;Chyi, Jen-Inn;Hsin, Yue-Ming
Contributors:	資訊電機學院電機工程學系
Keywords:	AlGaN;Aluminum gallium nitrides;C-V characteristics;charge trapping;Degradation;Dynamic tests;Dynamics;Fatigue tests;field plates;Gallium nitrides;GaN;heterostructure field-effect transistor;Plates;Stress;Stresses
Date:	2015-05-01
Issue Date:	2026-04-23 14:20:50 (UTC+8)
Publisher:	Wiley-VCH Verlag;Weinheim: Blackwell Publishing Ltd
Abstract:	摘要： Stressed C–V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high‐voltage off‐state stress. The C–V measurement results also correlated with the degradation in dynamic on‐resistance (RDS,on) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic RDS,on degradation, the location with high electric field that determines the major degradation is determined. Finally, a new source field plate is proposed and demonstrated to improve the dynamic performance degradation. 其他題名： Phys. Status Solidi A 出版者： Weinheim: Blackwell Publishing Ltd 出版日期： 2015-05 出處： Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1099-1103 資源來源： Wiley Online Library 版權： 2015 WILEY−VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201431643
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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